Semikron SKM200GAL176D

Semikron SKM200GAL176D
#SKM200GAL176D Semikron SKM200GAL176D New POWER IGBT TRANSISTOR , SKM200GAL176D pictures, SKM200GAL176D price, #SKM200GAL176D supplier
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SKM200GAL176D Features:
 
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes8)
Isolated copper baseplate sing DCB Direct Copper Bonding
• Large clearance (13 mm) and creepage distances (20 mm).
Typical Applications:
• AC inverter drives on mains 575 - 750 VAC
• DC bus voltage 750 - 1200 VDC
• Public transport (auxiliary syst.)
• Switching (not for linear use)
1) Tcase = 25 °C, unless otherwise specified 2) IF = – IC, VR = 1200 V, – diF/dt = 1000 A/µs, VGE = 0 V
6) The free-wheeling diodes of the GAL, GAR and D1 types have the data of the inverse diodes
of SKM 300 GA 173 D
8) CAL = Controlled Axial Lifetime Technology.
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current Ic:220A
Collector current Icp:440A
Collector power dissipation Pc:1250W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

POWER IGBT TRANSISTOR

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