Mitsubishi CM600YE2N-12F

Mitsubishi CM600YE2N-12F
#CM600YE2N-12F Mitsubishi CM600YE2N-12F New HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 1700V/600A/6200W, CM600YE2N-12F pictures, CM600YE2N-12F price, #CM600YE2N-12F supplier
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CM600YE2N-12F HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Collector-emitter voltage VCES VGE = 0V 1700V
Gate-emitter voltageVCES VCE = 0V ±20V
Collector current IC 600A
Collector current ICM 1200A
Maximum collector dissipation TC = 25°C, IGBT part 6200W
Junction temperature Tj –40 ~ +150°C
Storage temperature Tstg –40 ~ +125°C
Isolation voltage Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.4000V
Typical value 1.5 kg

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 1700V/600A/6200W

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